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Patents
39. Bhagwati Prasad, Joyeeta Nag, Seung-Yeul Yang, Adarsh Rajashekhar, Raghuveer S. Makala, “Ferroelectric field effect transistors having enhanced memory window and methods of making the same_A”, US Patent 11,996,462, (May 2024), Granted.
38. Alan Kalitsov, Derek Stewart, Bhagwati Prasad, “Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same – Part A”, US Patent, US11887640B2, (Jan 2024), Granted
37. Alan Kalitsov, Derek Stewart, Bhagwati Prasad, “Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same – Part B”, US Patent, US11889702B2, (Jan 2024), Granted.
36. Alan Kalitsov, Derek Stewart, Bhagwati Prasad, “Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same – Part C”, US Patent, US11871679B2, (Jan 2024), Granted.
35. Alan Kalitsov, Derek Stewart, Bhagwati Prasad, Goran Mihajlović “Magnetoresistive memory device including a plurality of reference layers", US Patent, US11839162B2, (Dec 2023), Granted
34. Bhagwati Prasad, Joyeeta Nag, Seung-Yeul Yang, Adarsh Rajashekhar, Raghuveer S. Makala, “Ferroelectric field effect transistors having enhanced memory window and methods of making the same”, US Patent: US011545506B2 (Jan 2023) and PCT: WO-2022103436-A1 Granted
33. Bhagwati Prasad, Rahul Sharangpani, “Antiferroelectric memory devices and methods of making the same” US Patent: US011502104B2 (Nov 2022) Granted
32. Bhagwati Prasad, Derek Stewart, Matt Carey, Tiffany Santos, “Spinel containing magnetic tunnel junction and method of making the same” US Patent: US011443790B2 (Sept 2022) Granted
31. Alan Kalitsov, Bhagwati Prasad, Derek Stewart, “Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same”, US Patent: US011411170B2 (August 2022) Granted
30. Alan Kalitsov, Bhagwati Prasad, Derek Stewart, “Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same”, US Patent: US011417379B2 (August 2022) & PCT: WO-2022093324-A1 Granted
29. Bhagwati Prasad, Rahul Sharangpani, “Antiferroelectric memory devices and methods of making the same” Filed US Patent, Application no.” 17/081,147 (2020). US Patent: US011430813B2 (August 2022) Granted
28. Bhagwati Prasad, “Magnetoresistive memory device including a magnesium containing dust layer”, US Patent: US011404193B2 (August 2022) Granted
27. Bhagwati Prasad, “Magnetoresistive memory device including a magnesium containing dust layer”, US Patent: US011404632B2 (August 2022) Granted
26. Alan Kalitsov, Kumar Srinivasan, Bhagwati Prasad, “Voltage assisted magnetic recording (vamr) data storage device for high density magnetic recording”, German Patent: DE 112020 005188T5 (July 2022) Granted
25. Goran Mihajlović, Wonjoon Jung, Bhagwati Prasad, “Magnetoresistive memory device including a reference layer side dielectric spacer layer”,US Patent: US011361805B2 (June 2022) Granted
24. Alan Kalitsov, Bhagwati Prasad, Derek Stewart, “Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same”, US Patent : US 20220131068A1 (April 2022) Granted
23. Bhagwati Prasad, Alan Kalitsov and Neil Smith, “Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same”, US Patent: US 11,276,446 B1 (March, 2022) Granted
22. Bhagwati Prasad, Alan Kalitsov and Neil Smith, “Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same”, US Patent: US 11,264,562 B1 (March 2022) & PCT:WO-20222046237-A1 (March, 2022) Granted.
21. Bhagwati Prasad, Derek Stewart and Bruce Terris “Spinel containing magnetic tunnel junction and method of making the same – Part B”, US Patent, US 11,217,289 B1 (Jan 2022) Granted
20. Bhagwati Prasad and Alan Kalitsov, “Magnetic device including multiferroic regions and methods of forming the same”, US Patent: US 11222920 B2 (Jan 2022) & PCT: WO-2021158250-A1 (Aug, 2021) Granted
19. Bhagwati Prasad and Alan Kalitsov, “Tunneling metamagnetic resistance memory device and methods of operating the same – Part B”, US Patent: US 11200934 B2 (Dec 2021) Granted
18. Bhagwati Prasad, Derek Stewart and Bruce Terris “Spinel containing magnetic tunnel junction and method of making the same – Part A”, US Patent: US11176981B1 (Nov 2021) and PCT: WO-2022026057-A1 (Feb, 2022) Granted
17. Bhagwati Prasad and Alan Kalitsov, “Tunneling metamagnetic resistance memory device and methods of operating the same – Part A”, US Patent:US11152048B1 (Oct 2021) Granted
16. Alan Kalitsov, Kumar Srinivasan and Bhagwati Prasad, “Data storage device with Voltage-assisted Magnetic Recording (VAMR) for high-density magnetic recording”, US Patent: US11087791B1 (Aug, 2021) Granted
15. Bhagwati Prasad and Alan Kalitsov, “Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same – Part B”, US Patent: US 11069741B2 (July, 2021) & PCT: WO202110158-A8 (July, 2021)Granted
14. Bhagwati Prasad, Alan Kalitsov, Matt Carey and Bruce Terris “Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same- Part C” US Patent: US 11056640 B2 (July, 2021) Granted
13. Alan Kalitsov and Bhagwati Prasad, “Voltage-controlled interlayer exchange coupling magnetoresistive memory device and method of operating thereof” US Patent: US 11049538 B2 (June, 2021) Granted.
12. Bhagwati Prasad, Alan Kalitsov, Matt Carey and Bruce Terris “Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same – Part B”, US Patent: US11005034B1 (May, 2021) Granted
11. Bhagwati Prasad, Alan Kalitsov, Matt Carey and Bruce Terris “Magnetoresistive memory device including a high dielectric constant capping layer and methods of making the same – Part A” US Patent: US10991407B1 (April, 2021) & PCT: WO- 2021101585-A1 (May-2021) Granted
10. Bhagwati Prasad and Alan Kalitsov, “Ferroelectric device with multiple polarization states and method of making the same”, US Patent, US10957711B2 (March, 2021) Granted
9. Bhagwati Prasad and Alan Kalitsov, “Electric field controllable spin filter tunnel junction magnetoresistive memory devices and methods of making the same- Part A”, US Patent: US10964748B1 (March, 2021) Granted.
8. Bhagwati Prasad, Chiradeep Ghosh, Manish Kumar Bhadu and Anindita Chakraborty; “A water filter candle system for removal of arsenic including associated impurities from arsenic contaminated group water and a method of manufacturing a water filter candle”, Indian Patent, Application no. 1453/KOL/2010. Granted
7. Bhagwati Prasad, Chiradeep Ghosh and Nikhiles Bandyopadhyay; “Multilayer bed filtering system for removal of arsenic from arsenic contaminated water”, Indian Patent, Application no. 969/KOL/2009. Granted
6. Bhagwati Prasad and Chiradeep Ghosh; “Method for treating arsenic contaminated water using iron industry waste product”, Indian Patent, Application no. 671/KOL/2009. Granted
5. Alan Kalitsov, Bhagwati Prasad, Rajesh Chodekar, Lei Wan, and Tiffany Santos, “Voltage Controlled Magnetic Anisotropy (VCMA) memory devices including platinum containing layer in contact with free layer”, Field US Patent, Application no. 18/065, 098 (2022).
4. Alan Kalitsov, Derek Stewart, Bhagwati Prasad, “Magnetoresistive memory device and method of operating same using phase controlled magnetic anisotropy”, Field US Patent, Application no. 18/048,121 (2022).
3. Rahul Sharangpani, Kartik Sondhi, Raghuveer S. Makala, Tiffany Santos, Fei Zhou, Joyeeta Nag, Bhagwati Prasad “Memory device containing composition-controlled ferroelectric memory elements and method of making the same”, Filed US Patent, US Patent Application no. 17/821,012 (2022).
2. Kartik Sondhi, Rahul Sharangpani, Raghuveer S. Makala, Tiffany Santos, Fei Zhou, Joyeeta Nag, Bhagwati Prasad, Adarsh Rajashekhar “Memory device containing composition-controlled ferroelectric memory elements and method of making the same” Filed US Patent, Application no. 17/820,997 (2022).
1. Bhagwati Prasad, Pavan Kumar Bijalwan, Surendra Soni, Abhijeet Sangle, Soumilya Nayak, Monoji Dutta and Rajiv O Dusane; “Method for depositing hydrogenated amorphous silicon thin film (a-Si:H) solar cell on Steel substrate by hot wire chemical vapour deposition technique”, Filed Indian patent, Application no. 281/OL/2013.
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