This webinar examined the design considerations of the magnetoelectric layer for ADFMR-based magnetometry, with a focus on the growth and optimization of FeGaB-based magnetostrictive thin films on YZ-cut LiNbO₃ piezoelectric substrates. It will conclude with examples illustrating how the design and properties of the magnetoelectric layer influence ADFMR device characteristics, including RF power absorption, sensitivity, and the sensor's limit of detection.

Dr. Gaurav Thareja, Director at Applied Materials, Silicon Valley, delivered a talk on “Logic Technology Roadmap for the Trillion Transistor Era,” sharing insights into semiconductor materials, processes, and systems engineering. The session provided valuable career guidance for students and a great platform to engage with academia and industry experts in India.

We had the privilege of hosting Prof. Dr.-Ing. Thomas Mikolajick from NaMLab and TU Dresden as a distinguished speaker in our Memory-Logic and Storage seminar series. Prof. Mikolajick explored the rise of ferroelectric hafnium oxide, a CMOS-compatible material poised to transform semiconductor memory. He discussed how ferroelectric polarization offers energy-efficient switching and versatile readout options, addressing the scaling challenges faced by traditional charge-based memory in the age of AI. The talk covered recent advances in material quality, device integration, and applications beyond memory, with a look at future developments. Prof. Mikolajick also engaged with our students in the lab, providing a valuable learning experience. We extend our heartfelt thanks for his impactful visit.

As AI-driven advancements push the limits of DRAM and NAND Flash, traditional scaling faces major hurdles. This talk explored how ferroelectric technologies could revolutionize memory and storage, enabling the transition from 2D to 3D DRAM and driving vertical scaling in NAND beyond 1000 layers. It also addressed the role of interface defects in ferroelectric field-effect transistors (FeFETs) and how engineering these defects can enhance performance. The discussion highlighted the future of ferroelectric-based embedded memories, a key enabler for AI workloads.

Dr. Nirmal Ramaswamy delivered an insightful talk on the growing demand for data generation, storage, and intelligence, which is driving significant advances in memory technology and advanced computing applications. He highlighted how memory performance is becoming a critical factor in modern computing, particularly in mobile and server environments. Dr. Ramaswamy discussed the current status and scaling paths of primary memory technologies (DRAM and NAND) and explored the emerging memory options, weighing their shortcomings and advantages. He also addressed the economics of scaling and the need for continued innovation in memory technology and system enablement to meet the diverse requirements of end applications.